So basically, unless the gate/source potential of this mosfet is able to exceed the maximum value of this rising source potential by at least 12V, the mosfet won't conduct efficiently. This rising potential could be as high as the drain voltage of the high side mosfet. It's because initially the load at the source of the high side mosfet presents a high impedance, resulting in a mounting voltage at the source of the mosfet. When identical devices or 4 n-channel mosfets are used in a full bridge network, bootstrapping becomes imperative. So what’s exactly a Bootstrapping Network and how does this become so crucial while developing a Full bridge inverter circuit? The crucial hurdle in a full bridge or a H-bridge design is the incorporation of 4 N-channel mosfet full bridge topology, which in turn demands the incorporation of a bootstrap mechanism for the high side mosfets. Whenever we think of a full bridge or an H-bridge inverter circuit, we are able to identify circuits having specialized driver ICs which makes us wonder, isn’t it really possible to design a full bridge inverter using ordinary components?Īlthough this may look daunting, a little understanding of the concept helps us realize that after all the process may not be that complex. Why Full-Bridge Inverter Circuit is not Easy
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May 2023
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